advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 30v low on-resistance r ds(on) 16m ? fast switching characteristic i d 37a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 3.6 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data & specifications subject to change without notice total power dissipation 34.7 -55 to 150 1 thermal data parameter maximum thermal resistance, junction-ambient (pcb mount) 3 operating junction temperature range -55 to 150 linear derating factor 0.28 storage temperature range continuous drain current 24 pulsed drain current 1 110 gate-source voltage + 20 continuous drain current 37 parameter rating rohs-compliant product drain-source voltage 30 201103212 AP50T03GH/j g d s to-251(j) g d s to-252(h) g d s advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap50t03gj) are available for low-profile applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v ? bv dss / ? t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.02 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =25a - 12.7 16 m ? v gs =4.5v, i d =18a - 23.7 30 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =25a - 8 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =125 o c) v ds =24v, v gs =0v - - 250 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =25a - 10 16 nc q gs gate-source charge v ds =24v - 3.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 6 - nc t d(on) turn-on delay time v ds =15v - 9 - ns t r rise time i d =25a - 75 - ns t d(off) turn-off delay time r g =3.3 ? ,v gs =10v - 17 - ns t f fall time r d =0.6 ? -4- ns c iss input capacitance v gs =0v - 815 1304 pf c oss output capacitance v ds =25v - 180 - pf c rss reverse transfer capacitance f=1.0mhz - 130 - pf r g gate resistance f=1.0mhz - 1.3 2 ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =25a, v gs =0v - - 1.3 v t rr reverse recovery time i s =25a, v gs =0 v , - 24 - ns q rr reverse recovery charge di/dt=100a/s - 10 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 3.surface mounted on 1 in 2 copper pad of fr4 board AP50T03GH/j
AP50T03GH/j fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 100 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0 20 40 60 80 100 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 10v 7.0v 5.0v 4.5v v g =3.0v 10 20 30 40 50 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =18a t c =25 o c 0.6 1.0 1.4 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =25a v g =10v 0 8 16 24 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.2 0.7 1.2 1.7 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
AP50T03GH/j fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 q v g 4.5v q gs q gd q g charge 0 2 4 6 8 10 0102030 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =15v v ds =20v v ds =24v i d =25a 100 1000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 20 40 60 0246810 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v 1 10 100 1000 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse operation in this area limited by r ds(on)
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